Qorvo
T1G4020036-FL
RF JFET Transistors DC-3.5GHz GaN 2X 120W 36Volt
Basic Information
View Datasheet ↗- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Packaging
- Tray
- RoHS
- Compliant (source record)
Technical Specifications
9 parameters- Transistor Type
- HEMT
- Technology
- GaN SiC
- Gain
- 16 dB
- Transistor Polarity
- N-Channel
- Output Power
- 260 W
- Operating Frequency
- 3.5 GHz
- Type
- GaN SiC HEMT
- Moisture Sensitive
- Yes
- Part # Aliases
- 1110866
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.