Microchip / Microsemi
Jantxv2N3019/TR
Bipolar Transistors - BJT
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip / Microsemi
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-39-3
- Mounting Style
- Through Hole
- RoHS
- Not compliant (source record)
Technical Specifications
13 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 140 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 0.5 V
- Maximum DC Collector Current
- 1 A
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- DC Current Gain hFE Max
- 300 at 500 mA, 10 V
- DC Collector/Base Gain hfe Min
- 15 at 1 A, 10 V
Show more parameters (1)
- Pd - Power Dissipation
- 800 mW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.