ChipSourceHub

Toshiba

2SK3075(TE12L,Q)

RF MOSFET Transistors N-Ch Radio Freq 5A 20W 30V VDSS

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Product Category
RF MOSFET Transistors
Series
2SK3075
Package
PW-X-4
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

13 parameters
Transistor Polarity
N-Channel
Technology
Si
Id - Continuous Drain Current
5 A
Vds - Drain-Source Breakdown Voltage
30 V
Gain
11.7 dB
Output Power
7.5 W
Configuration
Single
Operating Frequency
520 MHz
Type
RF Power MOSFET
Pd - Power Dissipation
20 W
Vgs - Gate-Source Voltage
25 V
Vgs th - Gate-Source Threshold Voltage
1.5 V
Show more parameters (1)
Unit Weight
0.010582 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

2SK3075(TE12L,Q) Specifications and Datasheet | ChipSourceHub