Central Semiconductor
2N3114
Bipolar Transistors - BJT NPN High Volt
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N3114
- Package
- TO-39-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 150 V
- Collector- Base Voltage VCBO
- 150 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 1 V
- Gain Bandwidth Product fT
- 40 MHz
- DC Current Gain hFE Max
- 120
- Height
- 6.6 mm
- Length
- 9.4 mm
- Width
- 9.4 mm
- DC Collector/Base Gain hfe Min
- 30
Show more parameters (1)
- Part # Aliases
- 2N3114 BK
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.