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Toshiba

RN2427TE85LF

Bipolar Transistors - Pre-Biased PNP 50V 0.8A TRANSISTOR LOG

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Product Category
Bipolar Transistors - Pre-Biased
Series
RN2427
Package
SOT-346-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

15 parameters
Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
2.2 kOhms
Typical Resistor Ratio
0.22
DC Collector/Base Gain hfe Min
90
Maximum Operating Frequency
200 MHz
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
- 800 mA
Peak DC Collector Current
800 mA
Pd - Power Dissipation
200 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Show more parameters (3)
DC Current Gain hFE Max
90
Emitter- Base Voltage VEBO
- 6 V
Unit Weight
0.000423 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

RN2427TE85LF Specifications and Datasheet | ChipSourceHub