Central Semiconductor
2N3300 TIN/LEAD
Bipolar Transistors - BJT NPN 60Vcbo 30Vceo 5.0Vebo 8pF
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N3300
- Package
- TO-39-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
10 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 30 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 600 mV
- Gain Bandwidth Product fT
- 250 MHz
- DC Collector/Base Gain hfe Min
- 100
- DC Current Gain hFE Max
- 300
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.