Central Semiconductor
PN3566 TIN/LEAD
Bipolar Transistors - BJT NPN 40Vcbo 30Vceo 5.0Vebo 25pF
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- PN3566
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
13 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 30 V
- Collector- Base Voltage VCBO
- 40 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 1 V
- Pd - Power Dissipation
- 625 mW
- Gain Bandwidth Product fT
- 40 MHz
- Continuous Collector Current
- 600 mA
- Country of Origin
- TW
- DC Collector/Base Gain hfe Min
- 150
Show more parameters (1)
- DC Current Gain hFE Max
- 600
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.