ROHM Semiconductor
2SCR579D3TLQ
Bipolar Transistors - BJT 2SCR579D3 is a power transistor with Low VCE(sat), suitable for low frequency amplifier.
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-252-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 3 A
- Collector- Emitter Voltage VCEO Max
- 160 V
- Collector- Base Voltage VCBO
- 160 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 400 mV
- Pd - Power Dissipation
- 10 W
- Gain Bandwidth Product fT
- 101 MHz
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 1.5 A
Show more parameters (3)
- Country of Origin
- TH
- DC Collector/Base Gain hfe Min
- 120
- DC Current Gain hFE Max
- 270
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.