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onsemi

NSS30100LT1G

Bipolar Transistors - BJT 2A 30V Low VCEsat

Basic Information

View Datasheet ↗
Manufacturer
onsemi
Product Category
Bipolar Transistors - BJT
Series
NSS30100LT1G
Package
SOT-23-3
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

15 parameters
Technology
Si
Transistor Polarity
PNP
Configuration
Single
Maximum DC Collector Current
1 A
Collector- Emitter Voltage VCEO Max
30 V
Collector- Base Voltage VCBO
50 V
Emitter- Base Voltage VEBO
5 V
Collector-Emitter Saturation Voltage
650 mV
Pd - Power Dissipation
310 mW
Gain Bandwidth Product fT
100 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Show more parameters (3)
Continuous Collector Current
- 1 A
Country of Origin
CN
Unit Weight
0.000282 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NSS30100LT1G Specifications and Datasheet | ChipSourceHub