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onsemi

BC847CWT3G

Bipolar Transistors - BJT GENRL TRANSISTOR

Basic Information

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Manufacturer
onsemi
Product Category
Bipolar Transistors - BJT
Series
BC847CWT3G
Package
SC-70-3
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

16 parameters
Technology
Si
Transistor Polarity
NPN
Configuration
Single
Maximum DC Collector Current
100 mA
Collector- Emitter Voltage VCEO Max
45 V
Collector- Base Voltage VCBO
50 V
Emitter- Base Voltage VEBO
6 V
Pd - Power Dissipation
150 mW
Gain Bandwidth Product fT
100 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Country of Assembly
CN
Show more parameters (4)
Country of Diffusion
MY
Country of Origin
CN
DC Collector/Base Gain hfe Min
270
Unit Weight
0.000988 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

BC847CWT3G Specifications and Datasheet | ChipSourceHub