Toshiba
2SA1941-O(Q)
Bipolar Transistors - BJT PNP VCEO -140V 70-W DC -10A 100W
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Mounting Style
- Through Hole
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 140 V
- Collector- Base Voltage VCBO
- - 140 V
- Emitter- Base Voltage VEBO
- - 5 V
- Collector-Emitter Saturation Voltage
- 2 V
- Gain Bandwidth Product fT
- 30 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 83
- Continuous Collector Current
- 10 A
- DC Collector/Base Gain hfe Min
- 35
Show more parameters (2)
- Pd - Power Dissipation
- 100 W
- Unit Weight
- 0.165788 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.