NXP Semiconductors
AFM912NT1
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 12 W CW over 136 to 941 MHz, 7.5 V
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Series
- AFM912
- Package
- DFN-16
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
14 parameters- Technology
- Si
- Id - Continuous Drain Current
- 4.7 A
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Operating Frequency
- 136 MHz to 941 MHz
- Gain
- 13.3 dB
- Output Power
- 15.7 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Country of Origin
- KR
- Forward Transconductance - Min
- 4.4 S
- Pd - Power Dissipation
- 142 W
- Vgs - Gate-Source Voltage
- + 12 V
Show more parameters (2)
- Vgs th - Gate-Source Threshold Voltage
- 2.1 V
- Part # Aliases
- 935439205515
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.