NXP Semiconductors
A3T18H408W24SR3
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 56 W Avg., 30 V
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Package
- NI-780S-4L2L
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
13 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Vds - Drain-Source Breakdown Voltage
- 65 V
- Gain
- 15.2 dB
- Output Power
- 56 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 225 C
- Operating Frequency
- 1805 MHz to 1880 MHz
- Type
- RF Power MOSFET
- Number of Channels
- 2 Channel
- Vgs - Gate-Source Voltage
- 10 V
- Vgs th - Gate-Source Threshold Voltage
- 0.7 V, 1.3 V
Show more parameters (1)
- Part # Aliases
- 935389834128
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.