ChipSourceHub

Infineon Technologies

BF 998 E6327

RF MOSFET Transistors N-CH 12 V 30 mA

Basic Information

View Datasheet ↗
Manufacturer
Infineon
Brand
Infineon Technologies
Product Category
RF MOSFET Transistors
Series
BF998
Package
SOT-143
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

16 parameters
Transistor Polarity
N-Channel
Technology
Si
Id - Continuous Drain Current
30 mA
Vds - Drain-Source Breakdown Voltage
12 V
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Configuration
Single Dual Gate
Height
1 mm
Length
2.9 mm
Type
RF Small Signal MOSFET
Width
1.3 mm
Channel Mode
Enhancement
Show more parameters (4)
Pd - Power Dissipation
200 mW
Vgs - Gate-Source Voltage
8 V to 12 V
Part # Aliases
BF998E6327HTSA1 BF998E6327XT SP000010978
Unit Weight
0.000353 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

BF 998 E6327 Specifications and Datasheet | ChipSourceHub