Central Semiconductor
2N5202 TIN/LEAD
Bipolar Transistors - BJT NPN 100Vcbo 75Vcer 50Vceo 6.0Vebo 35W
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N5202
- Package
- TO-66-2
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 5 A
- Collector- Emitter Voltage VCEO Max
- 75 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 1.2 V
- Pd - Power Dissipation
- 35 W
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- Continuous Collector Current
- 4 A
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 10
- DC Current Gain hFE Max
- 100
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.