ON Semiconductor
CPH5517-TL-E
Bipolar Transistors - BJT BIP PNP+NPN 1A 50V
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- CPH5517
- Package
- SOT-25-5
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Polarity
- NPN, PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- - 50 V, 60 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- - 280 mV, 130 mV
- Maximum DC Collector Current
- -1 A, 1 A
- Gain Bandwidth Product fT
- 420 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 560
- DC Collector/Base Gain hfe Min
- 200
- Pd - Power Dissipation
- 900 mW
Show more parameters (1)
- Unit Weight
- 0.000501 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.