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NXP / Freescale

MRF8VP13350NR3

RF MOSFET Transistors RF POWER LDMOS TRANSISTOR 700-1300 MHz, 350 W CW, 50 V

Basic Information

View Datasheet ↗
Manufacturer
NXP
Brand
NXP / Freescale
Product Category
RF MOSFET Transistors
Series
MRF8VP13350
Package
OM-780-4
Mounting Style
SMD/SMT
Packaging
Reel
RoHS
Compliant (source record)

Technical Specifications

16 parameters
Transistor Polarity
Dual N-Channel
Technology
Si
Id - Continuous Drain Current
1.3 A
Vds - Drain-Source Breakdown Voltage
- 500 mV, 100 V
Gain
19.2 dB
Output Power
350 W
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 150 C
Operating Frequency
700 MHz to 1300 MHz
Type
RF Power MOSFET
Number of Channels
2 Channel
Moisture Sensitive
Yes
Show more parameters (4)
Vgs - Gate-Source Voltage
- 6 V, 10 V
Vgs th - Gate-Source Threshold Voltage
1.3 V
Part # Aliases
935316089528
Unit Weight
0.108111 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

MRF8VP13350NR3 Specifications and Datasheet | ChipSourceHub