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IXYS

IXZR16N60

RF MOSFET Transistors IXZR16N60 16A 600V N Channel ZMOS Switch MOSFET ISO Plus 247

Basic Information

View Datasheet ↗
Manufacturer
IXYS
Product Category
RF MOSFET Transistors
Series
IXZR16
Package
TO-247-3
Mounting Style
Through Hole
Packaging
Tube
RoHS
Compliant (source record)

Technical Specifications

14 parameters
Transistor Polarity
N-Channel
Technology
Si
Id - Continuous Drain Current
18 A
Vds - Drain-Source Breakdown Voltage
600 V
Rds On - Drain-Source Resistance
530 mOhms
Output Power
350 W
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Type
RF Power MOSFET
Forward Transconductance - Min
6.4 S
Number of Channels
1 Channel
Qg - Gate Charge
42 nC
Show more parameters (2)
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
4.6 V

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

IXZR16N60 Specifications and Datasheet | ChipSourceHub