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onsemi

SBC807-25WT1G

Bipolar Transistors - BJT SS GP XSTR PNP 45V

Basic Information

View Datasheet ↗
Manufacturer
onsemi
Product Category
Bipolar Transistors - BJT
Series
BC807-25W
Package
SC-70-3
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

17 parameters
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Qualification
AEC-Q100
Collector- Base Voltage VCBO
50 V
Collector- Emitter Voltage VCEO Max
45 V
Collector-Emitter Saturation Voltage
700 mV
Configuration
Single
Country of Origin
CN
DC Collector/Base Gain hfe Min
160 at - 100 mA, - 1 V
DC Current Gain hFE Max
400 at - 100 mA, - 1 V
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
100 MHz
Show more parameters (5)
Maximum DC Collector Current
500 mA
Pd - Power Dissipation
460 mW
Technology
Si
Transistor Polarity
PNP
Unit Weight
0.000212 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SBC807-25WT1G Specifications and Datasheet | ChipSourceHub