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Vishay Semiconductors

SQJA36EP-T1_GE3

MOSFETs 40-V(D-S)175C MOSFET N-CHANNEL PowerPAK

Basic Information

View Datasheet ↗
Manufacturer
Vishay
Brand
Vishay Semiconductors
Product Category
MOSFETs
Series
SQA
Package
PowerPAK-SO-8L-4
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

24 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
40 V
Id - Continuous Drain Current
350 A
Rds On - Drain-Source Resistance
1.24 mOhms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
3.5 V
Qg - Gate Charge
86 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
500 W
Show more parameters (12)
Channel Mode
Enhancement
Qualification
AEC-Q101
Tradename
TrenchFET
Configuration
Single
Country of Origin
CN
Fall Time
13 ns
Forward Transconductance - Min
95 S
Rise Time
17 ns
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
35 ns
Typical Turn-On Delay Time
18 ns
Unit Weight
0.017870 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SQJA36EP-T1_GE3 Specifications and Datasheet | ChipSourceHub