Taiwan Semiconductor
TSM8568CV RGG
MOSFETs -30V, -4.5A, Complementary P-Channel Power MOSFET;30V, 5.7A N-Channel
Basic Information
View Datasheet ↗- Manufacturer
- Taiwan Semiconductor
- Product Category
- MOSFETs
- Package
- PDFN33-8
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
23 parameters- Technology
- Si
- Transistor Polarity
- N-Channel, P-Channel
- Number of Channels
- 2 Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Id - Continuous Drain Current
- 4.5 A, 5.7 A
- Rds On - Drain-Source Resistance
- 17 mOhms, 33 mOhms
- Vgs - Gate-Source Voltage
- - 20 V, 25 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
- Qg - Gate Charge
- 16 nC, 21 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 4.2 W
Show more parameters (11)
- Channel Mode
- Enhancement
- Qualification
- AEC-Q101
- Configuration
- Dual
- Country of Origin
- TW
- Fall Time
- 5.2 ns, 46 ns
- Forward Transconductance - Min
- 4.4 S, 5.8 S
- Rise Time
- 25 ns ,38 ns
- Typical Turn-Off Delay Time
- 22 ns, 50 ns
- Typical Turn-On Delay Time
- 5.8 ns, 6.2 ns
- Part # Aliases
- TSM8568CV
- Unit Weight
- 0.000988 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.