ChipSourceHub

Nexperia

PBSS306PX-QX

Bipolar Transistors - BJT PBSS306PX-Q/SOT89/MPT3

Basic Information

View Datasheet ↗
Manufacturer
Nexperia
Product Category
Bipolar Transistors - BJT
Package
SOT-89-3
Mounting Style
SMD/SMT
Packaging
Cut Tape

Technical Specifications

16 parameters
Technology
Si
Transistor Polarity
PNP
Configuration
Single
Maximum DC Collector Current
7.4 A
Collector- Emitter Voltage VCEO Max
100 V
Collector- Base Voltage VCBO
100 V
Emitter- Base Voltage VEBO
5 V
Collector-Emitter Saturation Voltage
210 mV
Pd - Power Dissipation
2.1 W
Gain Bandwidth Product fT
100 MHz
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Show more parameters (4)
Continuous Collector Current
3.7 A
Country of Origin
CN
DC Collector/Base Gain hfe Min
25 at - 4 A, -2 V
Part # Aliases
934667750115

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

PBSS306PX-QX Specifications and Datasheet | ChipSourceHub