Central Semiconductor
2N2907 PBFREE
Bipolar Transistors - BJT PNP Silicon
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-18-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
16 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Maximum DC Collector Current
- 600 mA
- Collector- Emitter Voltage VCEO Max
- 40 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 1.6 V
- Pd - Power Dissipation
- 400 mW
- Gain Bandwidth Product fT
- 200 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- Continuous Collector Current
- 600 mA
Show more parameters (4)
- Country of Origin
- IN
- DC Collector/Base Gain hfe Min
- 100
- DC Current Gain hFE Max
- 300
- Unit Weight
- 0.032805 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.