STMicroelectronics
STB28NM50N
MOSFET N-Ch 500V 0.135 21A MDmesh II
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- MOSFET
- Series
- STB28NM50N
- Package
- TO-263-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
20 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 500 V
- Id - Continuous Drain Current
- 21 A
- Rds On - Drain-Source Resistance
- 158 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Vgs - Gate-Source Voltage
- 25 V
- Qg - Gate Charge
- 50 nC
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 150 W
- Configuration
- Single
Show more parameters (8)
- Tradename
- MDmesh
- Transistor Type
- 1 N-Channel
- Type
- N-Channel MDmesh II Power MOSFET
- Fall Time
- 52 ns
- Rise Time
- 19 ns
- Typical Turn-Off Delay Time
- 62 ns
- Typical Turn-On Delay Time
- 13.6 ns
- Unit Weight
- 0.139332 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.