Wolfspeed / Cree
CG2H30070F-TB2
RF JFET Transistors Test Board without GaN HEMT
Basic Information
View Datasheet ↗- Manufacturer
- Cree, Inc.
- Brand
- Wolfspeed / Cree
- Product Category
- RF JFET Transistors
- Package
- CG2H30070F
- Mounting Style
- Screw Mount
- Packaging
- Bulk
- RoHS
- Not compliant (source record)
Technical Specifications
14 parameters- Transistor Type
- HEMT
- Technology
- GaN
- Gain
- 12 dB
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 120 V
- Vgs - Gate-Source Breakdown Voltage
- - 10 V, 2 V
- Id - Continuous Drain Current
- 12 A
- Output Power
- 85 W
- Maximum Drain Gate Voltage
- 28 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
Show more parameters (2)
- Operating Frequency
- 0.5 GHz to 3 GHz
- Vgs th - Gate-Source Threshold Voltage
- - 2.8 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.