Qorvo
T2G6000528-Q3
RF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz
Basic Information
View Datasheet ↗- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Series
- T2G
- Mounting Style
- SMD/SMT
- Packaging
- Tray
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Type
- HEMT
- Technology
- GaN SiC
- Gain
- 15 dB
- Transistor Polarity
- N-Channel
- Id - Continuous Drain Current
- 650 mA
- Output Power
- 10 W
- Pd - Power Dissipation
- 12.5 W
- Application
- Military Radar, Professional and Military Radio Communications
- Configuration
- Single
- Operating Frequency
- DC to 6 GHz
- Development Kit
- T2G6000528-Q3-EVB1, T2G6000528-Q3-EVB3, T2G6000528-Q3-EVB5
- Moisture Sensitive
- Yes
Show more parameters (1)
- Part # Aliases
- 1099997
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.