ON Semiconductor
NSVBSS63LT1G
Bipolar Transistors - BJT SS SOT23 DR XSTR PNP 100V
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- BSS63L
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 100 V
- Collector-Emitter Saturation Voltage
- - 250 mV
- Maximum DC Collector Current
- - 100 mA
- Gain Bandwidth Product fT
- 95 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Collector/Base Gain hfe Min
- 30
- Pd - Power Dissipation
- 225 mW
- Qualification
- AEC-Q101
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.