Infineon Technologies
IMW65R027M1HXKSA1
SiC MOSFETs SILICON CARBIDE MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- SiC MOSFETs
- Series
- IMW65R027
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
24 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Id - Continuous Drain Current
- 47 A
- Rds On - Drain-Source Resistance
- 34 mOhms
- Vgs - Gate-Source Voltage
- - 5 V, + 23 V
- Vgs th - Gate-Source Threshold Voltage
- 5.7 V
- Qg - Gate Charge
- 62 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 189 W
- Channel Mode
- Enhancement
Show more parameters (12)
- Tradename
- CoolSiC
- Configuration
- Single
- Country of Assembly
- CN
- Country of Diffusion
- AT
- Country of Origin
- AT
- Fall Time
- 14.2 ns
- Rise Time
- 13.6 ns
- Technology
- SiC
- Typical Turn-Off Delay Time
- 22.7 ns
- Typical Turn-On Delay Time
- 24.4 ns
- Part # Aliases
- IMW65R027M1H SP005398440
- Unit Weight
- 0.211644 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.