Nexperia
MJD42C-QJ
Bipolar Transistors - BJT SOT428 100V 6A PNP HI PWR BJT
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- DPAK-3 (TO-252-3)
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
16 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Maximum DC Collector Current
- 10 A
- Collector- Emitter Voltage VCEO Max
- 100 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 1.5 V
- Pd - Power Dissipation
- 1.6 W
- Gain Bandwidth Product fT
- 3 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Qualification
- AEC-Q101
Show more parameters (4)
- Continuous Collector Current
- 6 A
- Country of Origin
- CN
- DC Collector/Base Gain hfe Min
- 15 at - 3 A, - 4 V
- Part # Aliases
- 934662844118
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.