Qorvo
QPD1008L
RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN
Basic Information
View Datasheet ↗- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Series
- QPD
- Package
- NI-360
- Mounting Style
- Screw Mount
- Packaging
- Tray
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Type
- HEMT
- Technology
- GaN SiC
- Gain
- 17.5 dB
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 50 V
- Vgs - Gate-Source Breakdown Voltage
- 145 V
- Id - Continuous Drain Current
- 4 A
- Output Power
- 162 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 85 C
- Pd - Power Dissipation
- 127 W
- Configuration
- Single
Show more parameters (5)
- Operating Frequency
- 3.2 GHz
- Operating Temperature Range
- - 40 C to + 85 C
- Development Kit
- QPD1008LPCB401
- Moisture Sensitive
- Yes
- Vgs th - Gate-Source Threshold Voltage
- - 2.8 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.