ROHM Semiconductor
QS5Y1TR
Bipolar Transistors - BJT Isolated DC/DC Converter
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-25T-5
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- NPN, PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 30 V
- Collector- Base Voltage VCBO
- 30 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 200 mV
- Maximum DC Collector Current
- 3 A
- Gain Bandwidth Product fT
- 270 MHz, 300 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 500
- Continuous Collector Current
- 3 A
- DC Collector/Base Gain hfe Min
- 200
Show more parameters (2)
- Pd - Power Dissipation
- 1.25 W
- Part # Aliases
- QS5Y1
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.