Infineon Technologies
BC 817K-25W H6327
Bipolar Transistors - BJT AF TRANSISTOR
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- Bipolar Transistors - BJT
- Series
- BC 817K
- Package
- SOT-323-3
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
21 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 500 mA
- Collector- Emitter Voltage VCEO Max
- 45 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 700 mV
- Pd - Power Dissipation
- 250 mW
- Gain Bandwidth Product fT
- 170 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
Show more parameters (9)
- Qualification
- AEC-Q100
- Continuous Collector Current
- 500 mA
- Country of Assembly
- CN
- Country of Diffusion
- AT
- Country of Origin
- CN
- DC Collector/Base Gain hfe Min
- 160 at 100 mA, 1 V
- DC Current Gain hFE Max
- 400 at 100 mA, 1 V
- Part # Aliases
- SP000746848 BC817K25WH6327XT BC817K25WH6327XTSA1
- Unit Weight
- 0.000176 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.