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Diodes Incorporated

DMTH8004LPS-13

MOSFETs MOSFET BVDSS: 61V 100V PowerDI5060-8 T&R 2.5K

Basic Information

View Datasheet ↗
Manufacturer
Diodes Incorporated
Product Category
MOSFETs
Package
PowerDI5060-8
Mounting Style
SMD/SMT
Packaging
Reel

Technical Specifications

21 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
80 V
Id - Continuous Drain Current
100 A
Rds On - Drain-Source Resistance
3.8 mOhms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
2.8 V
Qg - Gate Charge
81 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
1.5 W
Show more parameters (9)
Channel Mode
Enhancement
Configuration
Single
Country of Origin
CN
Fall Time
27.7 ns
Rise Time
11.8 ns
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
55 ns
Typical Turn-On Delay Time
8.5 ns
Unit Weight
0.003422 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

DMTH8004LPS-13 Specifications and Datasheet | ChipSourceHub