Infineon Technologies
BFP842ESDH6327XTSA1
RF Bipolar Transistors RF BIP TRANSISTORS
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- RF Bipolar Transistors
- Series
- BFP842
- Package
- SOT-343-4
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Type
- Bipolar
- Technology
- SiGe
- Collector- Emitter Voltage VCEO Max
- 3.25 V
- Emitter- Base Voltage VEBO
- 4.1 V
- Continuous Collector Current
- 40 mA
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 450
- Operating Frequency
- 60 GHz
- Type
- RF Silicon Germanium
- Pd - Power Dissipation
- 120 mW
- Part # Aliases
- 842ESD BFP BFP842ESDH6327XT H6327 SP000943012
Show more parameters (1)
- Unit Weight
- 0.000243 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.