Central Semiconductor
2N3036
Bipolar Transistors - BJT NPN
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N3036
- Package
- TO-39-3
- Mounting Style
- Through Hole
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 120 V
- Emitter- Base Voltage VEBO
- 5 V
- Maximum DC Collector Current
- 1.2 A
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 35
- Height
- 6.6 mm
- Length
- 9.4 mm
- Width
- 9.4 mm
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 20
- Pd - Power Dissipation
- 800 mW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.