ON Semiconductor
NJVMJD2955T4G
Bipolar Transistors - BJT BIP PNP 10A 60V TR
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- MJD2955
- Package
- DPAK-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 70 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 1.1 V
- Maximum DC Collector Current
- 10 A
- Gain Bandwidth Product fT
- 2 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 100 at 4 A, 10 VDC
- Height
- 2.38 mm
Show more parameters (6)
- Length
- 6.73 mm
- Width
- 6.22 mm
- DC Collector/Base Gain hfe Min
- 20 at 4 A, 10 VDC
- Pd - Power Dissipation
- 20 W
- Qualification
- AEC-Q101
- Unit Weight
- 0.009185 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.