STMicroelectronics
STSA1805-AP
Bipolar Transistors - BJT POWER MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- Bipolar Transistors - BJT
- Series
- STSA1805
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Ammo Pack
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 150 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 200 mV
- Maximum DC Collector Current
- 5 A
- Gain Bandwidth Product fT
- 150 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 400
- Height
- 4.95 mm
Show more parameters (5)
- Length
- 4.95 mm
- Width
- 3.94 mm
- DC Collector/Base Gain hfe Min
- 20
- Pd - Power Dissipation
- 1.1 W
- Unit Weight
- 0.016000 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.