Infineon Technologies
BAS116E6327XT
Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- Diodes - General Purpose, Power, Switching
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
20 parameters- Product
- General Purpose Diodes
- Peak Reverse Voltage
- 85 V
- Max Surge Current
- 4.5 A
- If - Forward Current
- 250 mA
- Configuration
- Single
- Recovery Time
- 0.6 us
- Vf - Forward Voltage
- 1250 mV
- Ir - Reverse Current
- 80 nA
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Qualification
- AEC-Q101
- Height
- 1 mm
Show more parameters (8)
- Length
- 2.9 mm
- Termination Style
- Solder Tail
- Type
- Standard Recovery Rectifiers
- Width
- 1.3 mm
- Pd - Power Dissipation
- 370 mW
- Vr - Reverse Voltage
- 85 V
- Part # Aliases
- 116 BAS BAS116E6327HTSA1 E6327 SP000010194
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.