Infineon Technologies
BFR740L3RHE6327XTSA1
RF Bipolar Transistors NPN Silicn Germanium RF Transistor
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- RF Bipolar Transistors
- Series
- BFR740L3
- Package
- TSLP-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
11 parameters- Transistor Type
- Bipolar
- Technology
- SiGe
- Transistor Polarity
- NPN
- DC Collector/Base Gain hfe Min
- 160
- Collector- Emitter Voltage VCEO Max
- 4 V
- Emitter- Base Voltage VEBO
- 1.2 V
- Continuous Collector Current
- 40 mA
- Operating Frequency
- 40 GHz
- Pd - Power Dissipation
- 160 mW
- Part # Aliases
- 740L3RH BFR BFR74L3RHE6327XT E6327 SP000252393
- Unit Weight
- 0.000018 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.