ON Semiconductor
NSV1C200MZ4T1G
Bipolar Transistors - BJT PNP SOT223 BIP POWER TRAN
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- NSS1C200
- Package
- SOT-223-4
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 100 V
- Collector- Base Voltage VCBO
- - 140 V
- Emitter- Base Voltage VEBO
- - 7 V
- Collector-Emitter Saturation Voltage
- - 0.22 V
- Maximum DC Collector Current
- 3 A
- Gain Bandwidth Product fT
- 120 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 360 at - 500 mA, - 2 V
- DC Collector/Base Gain hfe Min
- 120
Show more parameters (3)
- Pd - Power Dissipation
- 2 W
- Qualification
- AEC-Q101
- Unit Weight
- 0.003951 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.