ON Semiconductor
2SB1122S-TD-E
Bipolar Transistors - BJT BIP PNP 1A 50V
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SB1122
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- - 60 V
- Emitter- Base Voltage VEBO
- - 5 V
- Collector-Emitter Saturation Voltage
- - 0.18 V
- Maximum DC Collector Current
- - 2 A
- Gain Bandwidth Product fT
- 150 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 560
- Continuous Collector Current
- - 1 A
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 140
- Pd - Power Dissipation
- 1.3 W
- Unit Weight
- 0.001806 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.