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NXP Semiconductors

MRF6V13250HSR5

RF MOSFET Transistors VHV6 250W 50V NI780HS

Basic Information

View Datasheet ↗
Manufacturer
NXP
Brand
NXP Semiconductors
Product Category
RF MOSFET Transistors
Series
MRF6V13250H
Package
NI-780S
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

14 parameters
Transistor Polarity
N-Channel
Technology
Si
Vds - Drain-Source Breakdown Voltage
120 V
Gain
20 dB
Output Power
230 W
Maximum Operating Temperature
+ 150 C
Configuration
Single
Operating Frequency
1.3 GHz
Type
RF Power MOSFET
Pd - Power Dissipation
476 W
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
2.7 V
Show more parameters (2)
Part # Aliases
935323152178
Unit Weight
0.168010 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

MRF6V13250HSR5 Specifications and Datasheet | ChipSourceHub