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Toshiba

RN1314,LF

Bipolar Transistors - Pre-Biased BRT 0.1A 50V 1KOhm / 10KOhm

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Product Category
Bipolar Transistors - Pre-Biased
Series
RN1314
Package
SC-70-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

14 parameters
Configuration
Single
Transistor Polarity
NPN
Typical Input Resistor
1 kOhms
Typical Resistor Ratio
0.1
DC Collector/Base Gain hfe Min
50
Maximum Operating Frequency
250 MHz
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Pd - Power Dissipation
100 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Emitter- Base Voltage VEBO
5 V
Show more parameters (2)
Channel Mode
Enhancement
Maximum DC Collector Current
100 mA

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

RN1314,LF Specifications and Datasheet | ChipSourceHub