onsemi
NJVMJD253T4G
Bipolar Transistors - BJT BIP DPAK PNP 4A 100V TR
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- MJD253
- Package
- DPAK-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
19 parameters- Technology
- Si
- Transistor Polarity
- NPN, PNP
- Configuration
- Single
- Maximum DC Collector Current
- 8 A
- Collector- Emitter Voltage VCEO Max
- 100 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 600 mV
- Pd - Power Dissipation
- 12.5 W
- Gain Bandwidth Product fT
- 40 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
Show more parameters (7)
- Qualification
- AEC-Q101
- Continuous Collector Current
- 4 A
- Country of Assembly
- VN
- Country of Diffusion
- MY
- Country of Origin
- VN
- DC Collector/Base Gain hfe Min
- 40
- DC Current Gain hFE Max
- 180
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.