ROHM Semiconductor
BSS63AT116
Bipolar Transistors - BJT TRANSISTOR FOR HIGH VOLT AMP
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 100 V
- Collector- Base Voltage VCBO
- - 110 V
- Emitter- Base Voltage VEBO
- - 6 V
- Collector-Emitter Saturation Voltage
- - 100 mV
- Maximum DC Collector Current
- - 200 mA
- Gain Bandwidth Product fT
- 200 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 30
- Continuous Collector Current
- - 100 mA
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 30
- Pd - Power Dissipation
- 200 mW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.