Diodes Incorporated
FCX558QTA
Bipolar Transistors - BJT Pwr Hi Voltage Transistor SOT89 T&R 1K
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- FCX558Q
- Package
- SOT-89-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
17 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 400 V
- Collector- Base Voltage VCBO
- - 400 V
- Emitter- Base Voltage VEBO
- - 7 V
- Collector-Emitter Saturation Voltage
- - 0.5 V
- Maximum DC Collector Current
- - 200 mA
- Gain Bandwidth Product fT
- 50 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 300
Show more parameters (5)
- Continuous Collector Current
- - 200 mA
- DC Collector/Base Gain hfe Min
- 100
- Pd - Power Dissipation
- 2 W
- Qualification
- AEC-Q101
- Unit Weight
- 0.001764 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.