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STMicroelectronics

BCP56-16

Bipolar Transistors - BJT NPN Medium Voltage

Basic Information

View Datasheet ↗
Manufacturer
STMicroelectronics
Product Category
Bipolar Transistors - BJT
Series
BCP56-16
Package
SOT-223-4
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

16 parameters
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage VCEO Max
80 V
Collector- Base Voltage VCBO
100 V
Emitter- Base Voltage VEBO
5 V
Maximum DC Collector Current
1 A
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
250
Height
1.8 mm
Length
6.5 mm
Width
3.5 mm
Show more parameters (4)
Continuous Collector Current
1 A
DC Collector/Base Gain hfe Min
40
Pd - Power Dissipation
1600 mW
Unit Weight
0.003951 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

BCP56-16 Specifications and Datasheet | ChipSourceHub