Central Semiconductor
2N5333
Bipolar Transistors - BJT 100Vcbo PNP Trans 80Vceo 6.0Vebo 2.0A
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N5333
- Package
- TO-39-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 1 V
- Gain Bandwidth Product fT
- 30 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- DC Current Gain hFE Max
- 120
- Continuous Collector Current
- 2 A
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 30
- Pd - Power Dissipation
- 1 W
- Part # Aliases
- 2N5333 PBFREE
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.