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Taiwan Semiconductor

TSM2307CX RFG

MOSFET 30V P channel MOSFET

Basic Information

View Datasheet ↗
Manufacturer
Taiwan Semiconductor
Product Category
MOSFET
Package
SOT-23-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

20 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
3 A
Rds On - Drain-Source Resistance
95 mOhms
Vgs th - Gate-Source Threshold Voltage
3 V
Vgs - Gate-Source Voltage
20 V
Qg - Gate Charge
15 nC
Minimum Operating Temperature
- 50 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
1.25 W
Show more parameters (8)
Configuration
Single
Channel Mode
Enhancement
Forward Transconductance - Min
5 S
Fall Time
7 ns
Moisture Sensitive
Yes
Rise Time
9 ns
Typical Turn-Off Delay Time
27 ns
Typical Turn-On Delay Time
10 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

TSM2307CX RFG Specifications and Datasheet | ChipSourceHub