NXP Semiconductors
MRFX600HSR5
RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Series
- MRFX600
- Package
- NI-780S-4L
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 32 A
- Vds - Drain-Source Breakdown Voltage
- 193 V
- Gain
- 26.4 dB
- Output Power
- 600 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Operating Frequency
- 1.8 MHz to 400 MHz
- Type
- RF Power MOSFET
- Number of Channels
- 2 Channel
- Pd - Power Dissipation
- 1.333 kW
Show more parameters (3)
- Vgs - Gate-Source Voltage
- - 6 V, 10 V
- Vgs th - Gate-Source Threshold Voltage
- 2.1 V
- Part # Aliases
- 935376371178
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.